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igw25t120 trenchstop ? series power semiconductors 1 rev. 2.4 nov. 09 low loss igbt in trenchstop ? and fieldstop technology ? short circuit withstand time ? 10 s ? designed for : - frequency converters - uninterrupted power supply ? trenchstop ? and fieldstop technology for 1200 v applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior ? npt technology offers easy parallel switching capability due to positive temperature coefficient in v ce(sat) ? low emi ? low gate charge ? qualified according to jedec 1 for target applications ? pb-free lead plating; rohs compliant ? complete product spectrum and pspice models : http://www.infineon.com/igbt/ type v ce i c v ce(sat ),tj=25c t j,max marking package igw25t120 1200v 25a 1.7v 150 c g25t120 pg-to-247-3 maximum ratings parameter symbol value unit collector-emitter voltage v ce 1200 v dc collector current t c = 25 c t c = 100 c i c 50 25 pulsed collector current, t p limited by t jmax i cpuls 75 turn off safe operating area v ce 1200v, t j 150 c - 75 a gate-emitter voltage v ge 20 v short circuit withstand time 2) v ge = 15v, v cc 1200v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 190 w operating junction temperature t j -40...+150 storage temperature t stg -55...+150 soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 c 1 j-std-020 and jesd-022 2) allowed number of short circuits: <1000; time between short circuits: >1s. g c e pg-to-247-3
igw25t120 trenchstop ? series power semiconductors 2 rev. 2.4 nov. 09 thermal resistance parameter symbol conditions max. value unit characteristic igbt thermal resistance, junction ? case r thjc 0.65 thermal resistance, junction ? ambient r thja 40 k/w electrical characteristic, at t j = 25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit static characteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =500 a 1200 - - collector-emitter saturation voltage v ce(sat) v ge = 15v, i c =25a t j =25 c t j =125 c t j =150 c - - - 1.7 2.0 2.2 2.2 - - gate-emitter threshold voltage v ge(th) i c =1ma, v ce = v ge 5.0 5.8 6.5 v zero gate voltage collector current i ces v ce =1200v , v ge =0v t j =25 c t j =150 c - - - - 0.25 2.5 ma gate-emitter leakage current i ges v ce =0v, v ge =20v - - 600 na transconductance g fs v ce =20v, i c =25a - 16 - s integrated gate resistor r gint 8 ? dynamic characteristic input capacitance c iss - 1860 - output capacitance c oss - 96 - reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz - 82 - pf gate charge q gate v cc =960v, i c =25a v ge =15v - 155 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 13 - nh short circuit collector current 1) i c(sc) v ge =15v, t sc 10 s v cc = 600v, t j = 25 c - 150 - a 1) allowed number of short circuits: <1000; time between short circuits: >1s.
igw25t120 trenchstop ? series power semiconductors 3 rev. 2.4 nov. 09 switching characteristic, inductive load, at t j =25 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 50 - rise time t r - 30 - turn-off delay time t d(off) - 560 - fall time t f - 70 - ns turn-on energy e on - 2.0 - turn-off energy e off - 2.2 - total switching energy e ts t j =25 c, v cc =600v, i c =25a v ge =-15/15v, r g =22 ? , l 2) =180nh, c 2) =39pf energy losses include ?tail? and diode reverse recovery. - 4.2 - mj switching characteristic, inductive load, at t j =150 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 50 - rise time t r - 32 - turn-off delay time t d(off) - 660 - fall time t f - 130 - ns turn-on energy e on - 3.0 - turn-off energy e off - 4.0 - total switching energy e ts t j =150 c v cc =600v, i c =25a, v ge =-15/15v, r g = 22 ? , l 2) =180nh, c 2) =39pf energy losses include ?tail? and diode reverse recovery. - 7.0 - mj 2) leakage inductance l and stray capacity c due to dynamic test circuit in figure e.
igw25t120 trenchstop ? series power semiconductors 4 rev. 2.4 nov. 09 i c , collector current 10hz 100hz 1khz 10khz 100khz 0a 10a 2 0a 3 0a 4 0a 5 0a 6 0a 7 0a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0,1a 1a 10a dc 10s t p =3s 50s 500s 20ms 150s f , switching frequency v ce , collector - emitter voltage figure 1. collector current as a function of switching frequency ( t j 150 c, d = 0.5, v ce = 600v, v ge = 0/+15v, r g = 22 ? ) figure 2. safe operating area ( d = 0, t c = 25 c, t j 150 c; v ge =15v) p tot , power dissipation 25c 50c 75c 100c 125c 0w 50w 100w 150w i c , collector current 25c 75c 125c 0a 10a 20a 30a 40a t c , case temperature t c , case temperature figure 3. power dissipation as a function of case temperature ( t j 150 c) figure 4. collector current as a function of case temperature ( v ge 15v, t j 150 c) i c i c
igw25t120 trenchstop ? series power semiconductors 5 rev. 2.4 nov. 09 i c , collector current 0v 1v 2v 3v 4v 5v 6v 0a 1 0a 2 0a 3 0a 4 0a 5 0a 6 0a 7 0a 15v 7v 9v 11v 13v v ge =17v i c , collector current 0v 1v 2v 3v 4v 5v 6v 0a 10a 20a 30a 40a 50a 60a 70a 15v 7v 9v 11v 13v v ge =17v v ce , collector - emitter voltage v ce , collector - emitter voltage figure 5. typical output characteristic ( t j = 25c) figure 6. typical output characteristic ( t j = 150c) i c , collector current 0v 2v 4v 6v 8v 10v 12v 0a 10a 2 0a 3 0a 4 0a 5 0a 6 0a 7 0a 25c t j =150c v ce(sat), collector - emitt saturation voltage -50c 0c 50c 100c 0,0v 0,5v 1,0v 1,5v 2,0v 2,5v 3,0v i c =25a i c =50a i c =15a i c =8a v ge , gate-emitter voltage t j , junction temperature figure 7. typical transfer characteristic (v ce =20v) figure 8. typical collector-emitter saturation voltage as a function of junction temperature ( v ge = 15v)
igw25t120 trenchstop ? series power semiconductors 6 rev. 2.4 nov. 09 t, switching times 0a 10a 20a 30a 40a 1ns 10ns 100ns t r t d(on) t f t d(off) t, switching times 5 ? 1 5? 2 5? 35? 45? 1 ns 10 ns 100 ns t f t r t d(off) t d(on) i c , collector current r g , gate resistor figure 9. typical switching times as a function of collector current (inductive load, t j =150c, v ce =600v, v ge =0/15v, r g =22 ? , dynamic test circuit in figure e) figure 10. typical switching times as a function of gate resistor (inductive load, t j =150c, v ce =600v, v ge =0/15v, i c =25a, dynamic test circuit in figure e) t, switching times 0c 50c 100c 150c 10ns 100ns t r t f t d(on) t d(off) v ge(th ) , gate - emitt trshold voltage -50c 0c 50c 100c 150c 0v 1v 2v 3v 4v 5v 6v 7v min. typ. max. t j , junction temperature t j , junction temperature figure 11. typical switching times as a function of junction temperature (inductive load, v ce =600v, v ge =0/15v, i c =25a, r g =22 ? , dynamic test circuit in figure e) figure 12. gate-emitter threshold voltage as a function of junction temperature ( i c = 1.0ma)
igw25t120 trenchstop ? series power semiconductors 7 rev. 2.4 nov. 09 e , switching energy losses 10 a 20 a 30 a 40 a 0,0mj 2,0mj 4,0mj 6,0mj 8,0mj 1 0,0mj 1 2,0mj 1 4,0mj e ts * e off *) e on and e ts include losses due to diode recovery e on * e , switching energy losses 5 ? 1 5? 2 5? 35? 0 mj 2 mj 4 mj 6 mj 8 mj e ts * e on * *) e on and e ts include losses due to diode recovery e off i c , collector current r g , gate resistor figure 13. typical switching energy losses as a function of collector current (inductive load, t j =150c, v ce =600v, v ge =0/15v, r g =22 ? , dynamic test circuit in figure e) figure 14. typical switching energy losses as a function of gate resistor (inductive load, t j =150c, v ce =600v, v ge =0/15v, i c =25a, dynamic test circuit in figure e) e , switching energy losses 50c 100c 150c 0mj 1mj 2mj 3mj 4 mj 5mj 6mj 7mj e ts * e on * *) e on and e ts include losses due to diode recovery e off e , switching energy losses 400v 500v 600v 700v 800v 0mj 1mj 2mj 3mj 4mj 5mj 6mj 7mj 8mj 9mj 10mj e ts * e on * *) e on and e ts include losses due to diode recovery e off t j , junction temperature v ce , collector - emitter voltage figure 15. typical switching energy losses as a function of junction temperature (inductive load, v ce =600v, v ge =0/15v, i c =25a, r g =22 ? , dynamic test circuit in figure e) figure 16. typical switching energy losses as a function of collector emitter voltage (inductive load, t j =150c, v ge =0/15v, i c =25a, r g =22 ? , dynamic test circuit in figure e)
igw25t120 trenchstop ? series power semiconductors 8 rev. 2.4 nov. 09 v ge , gate - emitter voltage 0nc 50nc 100nc 150nc 200nc 0v 5v 10v 15v 960v 240v c, capacitance 0v 10v 20v 10pf 100pf 1nf c rss c oss c iss q ge , gate charge v ce , collector - emitter voltage figure 17. typical gate charge ( i c =25 a) figure 18. typical capacitance as a function of collector-emitter voltage ( v ge =0v, f = 1 mhz) t sc , short circuit withstand time 12v 14v 16v 0s 5s 10s 15s i c(sc) , short circuit collector current 12v 14v 16v 18v 0a 50a 100a 150a 200a v ge , gate - emittetr voltage v ge , gate - emittetr voltage figure 19. short circuit withstand time as a function of gate-emitter voltage ( v ce =600v , start at t j = 25c ) figure 20. typical short circuit collector current as a function of gate- emitter voltage ( v ce 600v, t j 150 c)
igw25t120 trenchstop ? series power semiconductors 9 rev. 2.4 nov. 09 v ce , collector - emitter voltage 0v 200v 4 00v 600v 0a 20a 40a 60a 1.5us 1us 0.5us 0us i c v ce i c , collector current 0v 200v 400v 600v 0a 2 0a 4 0a 6 0a 1.5us 1us 0.5us 0us i c v ce t , time t , time figure 21. typical turn on behavior (v ge =0/15v, r g =22 ? , t j = 150 c, dynamic test circuit in figure e) figure 22. typical turn off behavior (v ge =15/0v, r g =22 ? , t j = 150 c, dynamic test circuit in figure e) z thjc , transient thermal resistance 10s 100s 1ms 10ms 100ms 1 0 -3 k/w 1 0 -2 k/w 1 0 -1 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 t p , pulse width figure 23. igbt transient thermal resistance ( d = t p / t ) r ,(k/w) , (s) 0.229 1.10*10 -1 0.192 1.56*10 -2 0.174 1.35*10 -3 0.055 1.52*10 -4 c 1 = r 1 r 1 r 2 c 2 = r 2
igw25t120 trenchstop ? series power semiconductors 10 rev. 2.4 nov. 09
igw25t120 trenchstop ? series power semiconductors 11 rev. 2.4 nov. 09 figure a. definition of switching times figure b. definition of switching losses p(t) 12 n t(t) j 2 2 n n t c rr r r r r figure d. thermal equivalent circuit figure e. dynamic test circuit leakage inductance l =180nh and stray capacity c =39pf.
igw25t120 trenchstop ? series power semiconductors 12 rev. 2.4 nov. 09 edition 2006-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 11/18/09. all rights reserved. attention please! the information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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